100-GHZ TRANSISTORS FROM WAFER-SCALE EPITAXIAL GRAPHENE PDF

Abstract: High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff. GHz Transistors from Wafer-Scale Epitaxial Graphene. Y.-M. Lin*,; C. Dimitrakopoulos,; K. A. Jenkins,; D. B. Farmer,; H.-Y. Chiu,; A. Grill. Including Carbon Nanotubes and Graphene Prasanna Chandrasekhar GHz transistors from wafer-scale epitaxial grapheneā€¯ were reported, also from an of a SiC wafer, achieving a cutoff frequency of GHz for a gate length of nm.

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Why do you think your paper is highly cited? Existing users log in. Featured Analyses What’s Hot In Where do you see your research leading in the future? By placing a metal gate electrode on the graphene channel, we demonstrated a graphene transistor that is capable of amplifying electrical signals at very high frequencies.

This is an important milestone in utilizing graphene for technologically relevant applications. Do you foresee any social or political implications for your research?

Graphene is a two-dimensional crystal consisting of a monolayer of carbon atoms arranged in a honeycomb lattice, and possessing unusual electronic properties transkstors may eventually lead to vastly faster transistors than those achieved so far. Science 21 December VolIssue Support Contact Us Corporate website. Scanning electron microscope image of a graphene device.

100-GHz transistors from wafer-scale epitaxial graphene.

100-gz Message Body Your Name thought you would like to see this page from the Science web site. The work benefited greatly from the insightful discussions and guidance of Dr. Previous left arrow key Next right arrow key Close Move. Log in to view full text via AAAS login.

GHz transistors from wafer-scale epitaxial graphene.

Please log in to add an alert for graphen article. Log in through your institution Log in with your institution via Shibboleth. How did you become involved in this research, and were there any problems along the way? Computer Science The sex robots are here. Yu-Ming Lin talks with ScienceWatch.

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While I do not expect to see any immediate social or political impact from our research, I hope that this research may open up new directions for the electronics industry beyond the conventional semiconductor materials such as Si, and potentially generate niche applications based on high-performance graphene devices.

I was already exploring electrical transport properties of graphene and its epitaxlal, and became involved with the fabrication and characterization of graphene rransistors when the CERA program was launched in May, We also investigated, for the first time, the scaling behavior of graphene devices as the device dimension shrinks, which exhibits a different trend from that of conventional semiconductors. Keith Jenkins and Dr.

Yu-Ming Lin on the Importance of Graphene in the Future –

Message Subject Your Name has forwarded a page to you from Science. Quasicrystals Tessellating tiny tetrahedrons. More options Purchase digital access to this article Download and print this article for your personal scholarly, research, and educational use. We only request your email address so that the person you are recommending the page to knows that you wafer-scwle them to see it, graphenne that it is not junk mail. This work trahsistors pointed out the issues to be addressed in order to fully utilize the potential of graphene in high-frequency electronics.

Would you summarize the significance of your paper in layman’s terms? May – New Hot Papers: In this paper, we presented an approach to fabricate top-gated graphene transistors using exfoliated graphene extracted from a graphite crystal, and demonstrated the operation of the graphene transistors at a frequency as high as 26 gigahertz, or 26 billion cycles per second.

Register for free to read this article As a service to the community, this article is available for free. Thank you for your interest in spreading the word about Science. The major challenges of this trnasistors included the design of the graphene transistor and the deposition of a high-quality oxide film as the gate insulator.

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Log in through your institution Log in epitsxial OpenAthens. The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.

Graphene holds great potential for future electronics, and its destiny is largely linked to various materials issues that need to be resolved, including the synthesis of large-scale, graphfne graphene sheets and the improvement of the device fabrication process. Register for free to read this article. Graphene is a material that has generated enormous research interest and activity in the past few years because of its unique electrical properties and its potential for use in future electronics.

International Security Next-generation wargames. Does it describe a new discovery, methodology, or synthesis of knowledge? Top-gated graphene field-effect transistor. Another great challenge involved ggraphene deposition of a high-quality insulator on graphene waer-scale deteriorating its transport properties, and this issue was successfully addressed by a process developed by Dr. This paper is likely well-cited because it presents one of the first experimental demonstrations of gigahertz graphene transistors with the highest frequency wwfer-scale thus far, and establishes the scaling behavior of device performance with respect to the device dimension.

Alberto Valdes-Garcia designed the transistor and performed the RF characterization. This work is therefore relevant and of interest to a wider audience within the graphene research community.

The author has also sent along images of his work.

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