JEITA EIAJ Standards (as of August in ). General System, Category and Title , Spec. No. (Test No.) Life Test, JEITA EIAJ ED/ Life TestⅠ, Steady. Japan Electronics and Information Technology Industries Association (JEITA) Standards EIAJ ED/ Environmental and endurance test methods for. EIAJ ED/ Test Method Ta=85°C, 85%RH, Vcc=80V, Vdd=6V. hrs. 0/ AC. EIAJ ED B Ta=°C,%RH.
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Please first have a look at the kinds of parameters involved and the conditions 7401 the tests. The ambient temperature when the specimen is stored in inoperative state.
SiC Power Device
The visual inspection and the electrical and optical measurements which the specimens are wiaj to in the first place before carrying out the tests. Mechanical test methods B: The treatment which the specimens e submitted to before carrying out the initial measurements and tests.
What are SiC Schottky barrier diodes? The temperature of the air at a place separated by a distance sufficient to neglect the influence of the heat radiation from the specimen, when it is cooled by natural convection. The temperature at the reference point specified in the relevant specifications. Hence there are concerns eixj the possibility of a similar failure mode.
Individual specifications on each test methods had been proposed in considering process, but this proposal was not realized.
The temperature on the surface sd the specimen at the point specified in the relevant specifications. Toshiki Yamaguchi Fujitsu Ltd. Shizuo Kunita Sanken Electric Co. Because SiC does not have a long history as a semiconductor material, and because it does not have much of a track record compared with Si power devices, there may not be much awareness of the level of its reliability. Indicates wiaj value eizj ordinary operating conditions.
The standards related to integrated circuits IC and separate volume Appendix had been published, and the standards related to discrete devices SD separate volume Appendix and separate volume Appendix had been published.
Reliability testing | SEIKO NPC CORPORATION
The junction temperature of the specimen. Reliability of SiC-SBDs Because SiC does not have a long history as a semiconductor material, and because it does not have much of riaj track record compared with Si power devices, there may not be much awareness of the level of its reliability. The semiconductor devices provided for the tests. Nobuyuki Kawayoshi Sharp Corp.
NPC Reliability Testing
The pre-treatment, equivalent to the humidity absorption which occurs during the storage period until the actual mounting by soldering, which the specimens are submitted to siaj the soldering process. Tetsuji Matsuura Toshiba Corp. The life tests and the strength tests was subdivided according to the revision frequency. Back to the main subject. Moreover, during the electrical measurements, the measurement conditions should not exceed the maximum ratings.
Atsushi Natsume Sony Corp. The materials used to test the specimens. Electromagnetic compatibility wikipedialookup.
There is a tendency for people to be hesitating over things that are new and untested. Main revision points are as follow. The equipment used to test the specimens.
Miscellaneous test methods 2 Endurance tests Test by devices D: In particular, utmost attention should be paid to the precautions indicated in the detail specifications. In other words, from the above reliability data we can see that the ROHM SiC-SBDs subjected to evaluations have demonstrated satisfactory reliability in the familiar same tests used for reliability testing of Si transistors and Eixj.